Amorphous semiconductors: Structural models

Defects in Amorphous Semiconductors: Amorphous Silicon

Defects in disordered (amorphous) semiconductors are discussed, with an emphasis on hydrogenated amorphous silicon. The general differences between defect phenomena in crystalline and amorphous hosts are described, and the special importance of the electron–phonon coupling is stressed. Detailed calculations for amorphous Si are presented using accurate first principles (density-functional) tech...

Parameter-free continuous drift-diffusion models of amorphous organic semiconductors.

Continuous drift-diffusion models are routinely used to optimize organic semiconducting devices. Material properties are incorporated into these models via dependencies of diffusion constants, mobilities, and injection barriers on temperature, charge density, and external field. The respective expressions are often provided by the generic Gaussian disorder models, parametrized on experimental d...

Spin Injection into Amorphous Semiconductors

Realistic models of binary glasses from models of tetrahedral amorphous semiconductors

We present an approach for modeling binary glasses beginning with models of tetrahedral amorphous semiconductors and report models of glassy GeSe2 , SiSe2 , SiO2, and GeSe4. The topology of our models are analyzed through partial pair correlations and static structure factors. Structural properties, including the first sharp diffraction peak, electronic and vibrational properties are all in agr...

Charge-carrier transport in amorphous organic semiconductors

Organic semiconductors have been extensively studied ever since the successful fabrication of organic light-emitting diodes (OLED).4 2-44 Due to their success, it is becoming increasingly important to understand the theory behind the properties of organic materials. In order to exploit all the advantages of implementing organic materials to construct devices, a detailed understanding of charge-...